Vertically-stacked silicon nanosheet field effect transistors at 3 nm technology nodes - simulation at nanoscale
by E. Mohapatra; T.P. Dash; S. Dey; J. Jena; S. Das; C.K. Maiti
International Journal of Nanoparticles (IJNP), Vol. 12, No. 3, 2020

Abstract: Feasibility of vertically-stacked silicon nanosheet FETs (SNS-FETs) for extreme scaling at 3 nm technology node are investigated for the first time as one of the possible solutions to continue to enhance the performances of the CMOS technology. In this work, we use 3D predictive simulations to study the performance potential of SNS-FETs at 3 nm technology node. With the end of happy scaling era, change of device architecture has raised integration complexity along with severe short channel effects, mobility degradation, variability and quantum tunnelling leakage. These are the major challenges as device dimensions are scaled for ultimate scaling below 7 nm. Towards low power and high speed (more-than-Moore applications), nanowires and nanosheet transistors are being proposed. Today, the possibility of FinFET downscaling is still open and more than ever alternatives to CMOS transistors, such as, vertically-stacked SNS-FETs are showing their potential to surpass FinFETs. Variability due to metal grain granularity (MGG) is critical at 3 nm technology nodes, as such, the device threshold voltage variation due to MGG is examined for single nanosheet NS-FET. Finally, we calculate the mean and standard deviation of these parameters to quantify the variability.

Online publication date: Tue, 15-Sep-2020

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanoparticles (IJNP):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com