Near-zero computing using NCFET for IoT applications Online publication date: Mon, 26-Apr-2021
by Kishore Sanapala; S.V.V. Satyanarayana; R. Sakthivel
International Journal of Intelligent Enterprise (IJIE), Vol. 8, No. 2/3, 2021
Abstract: The energy consumption of the devices or circuits built on the IoT's is becoming a significant concern with the complementary metal oxide semiconductor (CMOS) technology scaling. To reduce energy consumption, supply voltage (VDD) scaling has proved to be an effective technique with near-threshold/subthreshold computations depicting the endpoint of voltage scaling. This paper discusses how the near-zero computing (NZC) is achieved by scaling the VDD beyond the subthreshold regime using the negative capacitance FET (NCFET) to enable IoT with beyond CMOS features. After characterising the NCFET for near zero operation, the basic computational circuits: logic gates and 1-bitfull adder circuit are designed and simulated using NCFET at near-zero VDD of 0.1 V. In comparison with the CMOS counterparts, the NCFET logic designs have achieved significant improvements and is found that the NCFET logic results in more than 54%, 68%, 85%, and 95% savings in power, delay, energy, and EDP respectively.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Intelligent Enterprise (IJIE):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook