Fast algorithm for bandstructure calculation in silicon nanowires using supercell approach Online publication date: Wed, 14-Mar-2007
by Ximeng Guan, Zhiping Yu
International Journal of Computational Science and Engineering (IJCSE), Vol. 2, No. 3/4, 2006
Abstract: Energy bandstructure in silicon nanowires with [100] crystal orientation is calculated using the Tight-Binding (TB) model with supercell approach. Numerical methods are designed according to the physical model to reach an optimal computational performance. Computation results show that the bandstructures of silicon nanowires deviate from that of bulk silicon. The efficiency and accuracy of the TB algorithm are analysed and compared to its counterpart – the Density Functional Theory (DFT). Test examples show that TB delivers a good accuracy while far superior over DFT in terms of computational cost.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Computational Science and Engineering (IJCSE):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com