Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications
by Heather A. Murdoch, R. Edwin Garcia
International Journal of Materials and Product Technology (IJMPT), Vol. 35, No. 3/4, 2009

Abstract: The present paper analyses the effect of crystallographic texture on the electromechanical interactions of polycrystalline PZT films. These interactions are responsible for inducing local enhancements of the remnant polarisation. Built-in stresses and electric fields are responsible for asymmetries in the local shape of the hysteretic loop that are as large as 25% in the coercive field and 10% in the out-of-plane remnant polarisation. Simulations show two types of 180° domain walls are favoured: stress-free and mechanically tensile polarisation interfaces. For [001] fibre textured grains a texture of 37 MRDs (r = 0.3) will maximise the performance of individual memory units.

Online publication date: Sat, 23-May-2009

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