A novel nanoscale high breakdown voltage lateral bipolar junction transistor on silicon-on-insulator
by Sajad A. Loan, S. Qureshi, S. Sundar Kumar Iyer
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009

Abstract: A novel nanoscale lateral bipolar junction transistor (LBJT) on silicon-on-insulator (SOI) with buried oxide double step (BODS) structure is proposed. Numerical simulations demonstrate that the breakdown voltage of the proposed device is significantly higher than that of the conventional device. An increase of 150% in breakdown voltage has been obtained in the proposed device. The increase in the breakdown voltage is due to the creation of an additional electric field peak in the collector drift region, leading to greater uniformity in the horizontal component of the surface electric field and hence increases in the breakdown voltage.

Online publication date: Mon, 07-Sep-2009

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