Cross-section high resolution transmission electron microscopy and nanoprobe investigations of gallium nitride nanowires
by Benjamin W. Jacobs, Kaylee McElroy, Raed A. Al-Duhaileb, Martin A. Crimp, Virginia M. Ayres, Richard E. Stallcup, Adam B. Hartman, Mary Anne Tupta
International Journal of Nanomanufacturing (IJNM), Vol. 6, No. 1/2/3/4, 2010

Abstract: Gallium nitride nanowires and rods were grown by a vapour-solid growth mechanism over an 850-1,000°C furnace growth temperature range. Investigations by parallel (cross-section) high resolution transmission electron microscopy revealed correlated internal structures. The effects of the internal structures on electronic properties were investigated by micro- and nano-probe experiments. A space-charge limited interpretation of the observed non-linear I-V behaviour is examined.

Online publication date: Sun, 22-Aug-2010

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