Schottky emission effect in surface topography: method and application Online publication date: Sat, 28-Feb-2015
by Albert Weckenmann, Zhengshan Sun, Alexander Schuler
International Journal of Nanomanufacturing (IJNM), Vol. 7, No. 2, 2011
Abstract: Presented here is an application of Schottky emission effect in surface topography. Since using current transfer mechanism can detect the metal or semiconductor surface structures in high resolution without contact, the tendency of Schottky emission in surface metrology is obvious. In this study, Schottky emission property in practical condition is compared both theoretically and practically into detail with tunnelling effect and field emission in order to distinguish the observed phenomena. A new developed probing system holding a thick electrical probe is exemplified to demonstrate the Schottky emission effect application in surfaces study. Future prospects of applying Schottky emission to manufacturing metrology are overviewed.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanomanufacturing (IJNM):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com