Improvement of compositional homogeneity in In1-xGaxAs bulk crystals grown by the travelling liquidus-zone method Online publication date: Tue, 30-Nov-2004
by K. Kinoshita, Y. Ogata, N. Koshikawa, S. Adachi, S. Yoda, M. Iwai, T. Tsuru, Y. Muramatsu
International Journal of Materials and Product Technology (IJMPT), Vol. 22, No. 1/2/3, 2005
Abstract: Homogeneity of In1-xGaxAs bulk crystals grown by the Travelling Liquidus-Zone (TLZ) method was improved by controlling the position of the freezing interface. This was achieved by matching precisely the rate of sample translation with the freezing rate that was calculated as a function of temperature gradient in the liquidus-zone through our one-dimensional TLZ growth model. Furthermore, results show that the sample translation at a constant rate from the beginning to the end of the crystal growth process is sufficient for the growth of homogeneous crystals, and no complicated procedures such as feedback of the interface temperature, and/or supply of the solute during crystal growth are required. This is an important feature (advantage) of the TLZ method over other growth techniques used to grow homogeneous alloy crystals.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Materials and Product Technology (IJMPT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook