Delay analysis of ultra high speed InAlAs/InGaAs high electron mobility transistor
by Meryleen Mohapatra; Nutan Shukla; A.K. Panda
International Journal of Nano and Biomaterials (IJNBM), Vol. 5, No. 4, 2014

Abstract: This work deals with the DC, RF and delay analysis of a InAlAs/InGaAs based high electron mobility transistor with different gate lengths viz. 50 nm, 35 nm and 15 nm. A maximum drain current (I_dss) of 398 mA/mm is achieved at V_ds of 0.4 V for a 15 nm gate length device which is more as compared to 50 nm and 35 nm gate length HEMT with a current of 368 mA/mm, 384 mA/mm respectively. A cutoff frequency (f_T) of 1.3 THz is obtained for a 15 nm gate length HEMT while a cutoff frequency of 625 GHz and 1.05 THz has been achieved for a 50 nm and 35 nm gate length devices. A maximum oscillation frequency (f_max) of 1.8 THz has been reported for a 15 nm gate length device where as a f_max of 1.35 THz and 1.58 THz has been obtained for a 50 nm and 35 nm gate length HEMT. For a 50 nm, 35 nm and 15 nm gate length HEMT the transit time obtained is 0.42 psec, 0.3 psec, 0.22 psec respectively.

Online publication date: Fri, 12-Jun-2015

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nano and Biomaterials (IJNBM):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com