Electron field emission from porous silicon prepared at low anodisation currents Online publication date: Wed, 18-Jan-2006
by A.A. Evtukh, V.G. Litovchenko, N.I. Klyui, M.O. Semenenko, E.B. Kaganovich, E.G. Manoilov
International Journal of Nanotechnology (IJNT), Vol. 3, No. 1, 2006
Abstract: The dependence of electron field emission (FE) characteristics of porous silicon (por-Si) prepared by anodisation at low current density without external bias is investigated. Effective electron FE from por-Si on p-Si flat surface was revealed. With growth of anodisation current (from 1 mA/cm² to 5 mA/cm²) the electron FE efficiency was decreased. Resonance tunnelling at electron field emission from por-Si was observed. The por-Si coating with thin diamond-like carbon film allowed the increase of the efficiency and stability of electron emission current significantly. The obtained experimental results on electron FE from por-Si on flat p-Si silicon surface were explained on the basis of electrical field enhancement coefficient growth, existence of dipole Si-H layer, lowering of por-Si electron affinity and growth of native SiO2 oxide on silicon surface. The model for explanation of resonance tunnelling from por-Si was proposed.
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