Title: Modulation of millimetre-wave and THz properties of IMPATT sources via external magnetic field

Authors: Partha Banerjee; Aritra Acharyya; Arindam Biswas; A.K. Bhattacharjee

Addresses: Department of Electronics and Communication Engineering, Academy of Technology, Adisaptagram, Hooghly, WB – 712121, India ' Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, WB – 736170, India ' Department of Mining Engineering, Kazi Nazrul University, Asansol, Burdwan, WB – 713340, India ' Department of Electronics and Communication Engineering, National Institute of Technology, Dugrapur, WB – 713209, India

Abstract: The modulation of millimetre-wave (mm-wave) and terahertz (THz) properties of impact avalanche transit time (IMPATT) sources under external steady magnetic field has been studied in this paper. The arrangement of magnetic field tuning of IMPATT oscillators by using external transverse steady magnetic field is referred to as magnetic field tunable avalanche transit time (MAGTATT) oscillators. The sensitivities of various static, large-signal and noise characteristics of silicon-based MAGTATT sources operating at mm-wave atmospheric window frequencies (94, 140 and 220 GHz) and two different THz frequencies (0.3 and 0.5 THz) have been studied. Comprehensive two-dimensional simulation models developed by the authors for evaluating static, large-signal and noise characteristics of MATATT diodes have been used for this purpose. The simulation results show that the above-mentioned magnetic field sensitivities of the device properties are significantly reduced with the increase of the operating frequency.

Keywords: atmospheric window frequency; MAGTATT; sensitivity analysis; terahertz; THz.

DOI: 10.1504/IJNP.2020.105998

International Journal of Nanoparticles, 2020 Vol.12 No.1/2, pp.17 - 32

Received: 15 Jan 2019
Accepted: 24 Jun 2019
Published online: 24 Mar 2020 *

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