Title: Emerging resistive random-access memory for 'fog' computing and IoT: materials and structural options taxonomy

Authors: V.А. Lapshinsky; L.N. Patrikeev

Addresses: Department of Micro and Nanoelectronics, National Research Nuclear University MEPhI, Kashirskoe shosse, 31, Moscow, 115409, Russia ' Department of Micro and Nanoelectronics, National Research Nuclear University MEPhI, Kashirskoe shosse, 31, Moscow, 115409, Russia

Abstract: The emergence of resistive random-access memory (ReRAM) die and fog computing plus internet-of-things (IoT) has given rise to the need for developing memristive memory elements structure and material conductance mechanisms taxonomy for ReRAM. In this paper, we review those aspects, including nanoparticles (metallic, bimetallic, etc.), graphene and other carbonbased materials and structures and related 2D materials. The corresponding taxonomies are presented in this paper, which can help to find new materials, optimal values of technological parameters, optimise the structure and maximise the efficiency ReRAM for emerging applications.

Keywords: ReRAM; material taxonomy; GRM; graphene and related materials RDRSP; reversible and driven resistive switching phenomena; charge transport mechanisms; RSM; resistive switching media; interfacial engineering layers; memristive story structures; smart' memory chips; PIM/CIM; processing/computing-in-memory; fog computing; IoT; internet-of-things.

DOI: 10.1504/IJNT.2019.106616

International Journal of Nanotechnology, 2019 Vol.16 No.6/7/8/9/10, pp.421 - 435

Published online: 15 Apr 2020 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article