Title: Study of the additives influence in the CMP slurry for the surfaces planarisation covered by selective transfer

Authors: Filip Ilie; George Ipate

Addresses: Department of Machine Elements and Tribology, Polytechnic University of Bucharest, 313 Spl. Independentei, 060042 Bucharest, Romania ' Department of Biotechnical Systems, Polytechnic University of Bucharest, 313 Spl. Independentei, 060042 Bucharest, Romania

Abstract: Chemical mechanical planarisation (CMP) is the only effective technique for obtaining surfaces with higher resolution and flatness, by removing the metal excess obtained in the selective-transfer process. The CMP process of the selective-layer assumes layer surface oxidation, protection its, and passivation layer removal from the tops of the protrusions by abrasive particles mechanical action. The selective-layer slurry consists of hydrogen peroxide (H₂O₂) as an oxidiser, organic acids as complexing and etching agents, benzotriazole (BTA) as a corrosion inhibitor and silica (SiO₂) particles as abrasive. To a higher removal rate and better slurry stability was used the citric acid, and BTA controlled adding in slurry could change the removal and etching rate of the selective-layer. This paper analyses the additives effect in CMP slurry on the polishing of covered surfaces through selective-transfer, considering removal and etching rates, as well as the slurry behaviour with different types and concentrations of additives, in various proportions.

Keywords: additives; CMP slurry; covered surfaces; selective-layer; solid particles; removal and etching rate.

DOI: 10.1504/IJSURFSE.2020.108209

International Journal of Surface Science and Engineering, 2020 Vol.14 No.2, pp.105 - 116

Received: 15 Apr 2019
Accepted: 07 Sep 2019
Published online: 06 Jul 2020 *

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