Title: Near-zero computing using NCFET for IoT applications

Authors: Kishore Sanapala; S.V.V. Satyanarayana; R. Sakthivel

Addresses: Department of ECE, Marri Laxman Reddy Institute of Technology and Management, Hyderabad, India ' Department of ECE, Sri Vasavi Engineering College, Tadepalligudem, India ' School of Electronics Engineering, Vellore Institute of Technology, Vellore, India

Abstract: The energy consumption of the devices or circuits built on the IoT's is becoming a significant concern with the complementary metal oxide semiconductor (CMOS) technology scaling. To reduce energy consumption, supply voltage (V_DD) scaling has proved to be an effective technique with near-threshold/subthreshold computations depicting the endpoint of voltage scaling. This paper discusses how the near-zero computing (NZC) is achieved by scaling the V_DD beyond the subthreshold regime using the negative capacitance FET (NCFET) to enable IoT with beyond CMOS features. After characterising the NCFET for near zero operation, the basic computational circuits: logic gates and 1-bitfull adder circuit are designed and simulated using NCFET at near-zero V_DD of 0.1 V. In comparison with the CMOS counterparts, the NCFET logic designs have achieved significant improvements and is found that the NCFET logic results in more than 54%, 68%, 85%, and 95% savings in power, delay, energy, and EDP respectively.

Keywords: complementary metal oxide semiconductor; CMOS; energy; internet of thing; IoT; NCFET; near-zero computing; NZC.

DOI: 10.1504/IJIE.2021.114514

International Journal of Intelligent Enterprise, 2021 Vol.8 No.2/3, pp.288 - 295

Accepted: 17 Feb 2020
Published online: 26 Apr 2021 *

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