Title: Investigation of DC performance of Ge-source pocket silicon-on-insulator tunnel field effect transistor in nano regime

Authors: Sanjeet Kumar Sinha; Sweta Chander

Addresses: School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India ' School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India

Abstract: As devices are scaled down in nano regime the steepest subthreshold swing becomes the most desirable characteristic for the improvement of the performance of devices. To address this issue, tunnel field effect transistor is one of the promising candidates for replacing conventional MOS device. This paper investigates the impact of source pocket on switching behaviour of n-type Ge-source SOI-TFET and shows improvements in the device performance in terms of SS, I_ON, I_OFF and I_ON/I_OFF. The proposed device is compared with the homojunction SOI-TFET. The improved electrical characteristics of device are analysed on the basis of simulation results and justified by the theoretical concept. The device offers the steepest SS of 11 mV/decade, higher I_ON of 120 μA, and higher I_ON/I_OFF ratio of 8.64 × 10¹¹. The device characteristics are investigated by using TCAD tool.

Keywords: tunnel field effect transistor; TFET; heterojunction; homojunction; subthreshold swing; SOI-TFET.

DOI: 10.1504/IJNP.2021.114896

International Journal of Nanoparticles, 2021 Vol.13 No.1, pp.13 - 20

Received: 29 Apr 2020
Accepted: 22 May 2020
Published online: 11 May 2021 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article