Article: Design and characterisation of a new GaN/AlGaN HEMT transistor Journal: International Journal of Modelling, Identification and Control (IJMIC) 2021 Vol.38 No.3/4 pp.302 - 311 Abstract: HEMT transistor is considered as a backbone of both optical and microwave high-power electronic applications. In this paper, we designed and discussed the structure of an AlGaN/GaN HEMT. We designed the original two-dimensional architecture composed of COMSOL Multi-physics software. This model is characterised by its very small geometric dimensions 0.52 μm × 1 μm, and Lg = 0.24 μm. It is standardised and meets the operating needs of microcircuits, and it has a very low power dissipation of 3.3 W/mm, the maximum current value is 330 mA/mm, the threshold voltage VTH = 3 V and the trans-conductance Gm = 100 mS/mm. In addition, this device shows good electrical simulation results without the convergence problem of higher gate voltage (Vgs = 5 V). In addition, it can withstand the effect of thermal effects on the DC performance of the transistor at temperatures up to 225°C. The existing data introduces, discusses, and confirms the results. Inderscience Publishers - linking academia, business and industry through research

Title: Design and characterisation of a new GaN/AlGaN HEMT transistor

Authors: Naji Guedri; Naoufel Ismail; Rached Gharbi

Addresses: Laboratoire d'Ingénierie des Systèmes Industriels et des Energies Renouvelables (LISIER), Université de Tunis, Ecole Nationale Supérieure d'Ingénieurs de Tunis (ENSIT), University of Tunis, Higher National Engineering School (ENSIT), 05 Av. Taha Hussein, Montfleury 1008 Tunis, Tunisia ' Laboratoire d'Ingénierie des Systèmes Industriels et des Energies Renouvelables (LISIER), Université de Tunis, Ecole Nationale Supérieure d'Ingénieurs de Tunis (ENSIT), University of Tunis, Higher National Engineering School (ENSIT), 05 Av. Taha Hussein, Montfleury 1008 Tunis, Tunisia ' Laboratoire d'Ingénierie des Systèmes Industriels et des Energies Renouvelables (LISIER), Université de Tunis, Ecole Nationale Supérieure d'Ingénieurs de Tunis (ENSIT), University of Tunis, Higher National Engineering School (ENSIT), 05 Av. Taha Hussein, Montfleury 1008 Tunis, Tunisia

Abstract: HEMT transistor is considered as a backbone of both optical and microwave high-power electronic applications. In this paper, we designed and discussed the structure of an AlGaN/GaN HEMT. We designed the original two-dimensional architecture composed of COMSOL Multi-physics software. This model is characterised by its very small geometric dimensions 0.52 μm × 1 μm, and L_g = 0.24 μm. It is standardised and meets the operating needs of microcircuits, and it has a very low power dissipation of 3.3 W/mm, the maximum current value is 330 mA/mm, the threshold voltage V_TH = 3 V and the trans-conductance G_m = 100 mS/mm. In addition, this device shows good electrical simulation results without the convergence problem of higher gate voltage (V_gs = 5 V). In addition, it can withstand the effect of thermal effects on the DC performance of the transistor at temperatures up to 225°C. The existing data introduces, discusses, and confirms the results.

Keywords: new structure AlGaN/GaN HEMT; temperature effects; simulation COMSOL multi-physics; gate width; cutoff frequency; transport property; two-dimensional electron gas mobility; gallium nitride (GaN); electron mobility; (I-V) characteristics.

DOI: 10.1504/IJMIC.2021.123379

International Journal of Modelling, Identification and Control, 2021 Vol.38 No.3/4, pp.302 - 311

Received: 23 Jun 2020
Accepted: 25 Jan 2021
Published online: 13 Jun 2022 *

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Title: Design and characterisation of a new GaN/AlGaN HEMT transistor

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