Title: Y-shaped double-gate high electron mobility transistor for radio frequency applications

Authors: Santashraya Prasad; Aminul Islam

Addresses: Department of ECE, Birla Institute of Technology (BIT), Mesra, Ranchi-835215, Jharkhand, India ' Department of ECE, Birla Institute of Technology (BIT), Mesra, Ranchi-835215, Jharkhand, India

Abstract: This paper presents a new Y-shaped double-gate high electron mobility transistor (HEMT) and studies the effect of recessing gate 1 (G₁). Various optimisation schemes have been incorporated in the newly proposed HEMT structure. The double-gate design shows a desirable RF characteristic such as transition frequency (f_T) and maximum oscillation frequency (f_MAX). Various DC characteristics such I_DS - V_DS, I_DS - V_GS and transconductance (g_m) of the proposed structure have been analysed. The optimum values of V_T, g_m, and I_DS have been obtained by proper positioning of gate 2 (G₂) with respect to gate 1 (G₁). This paper also investigates various microwave noise parameters such as minimum noise figure (NF_MIN), optimum reflection coefficient (Γ_OPT), and noise conductance (g_n), which are found to be acceptable for its desired application such as low noise amplifier (LNA) operable even beyond Ka band. The possible fabrication steps of the proposed structure are presented with suitable diagrams. The theoretical model of the proposed design has been verified with the simulation results obtained by simulating the structure with Atlas of Silvaco.

Keywords: mobility; transconductance; transition frequency; maximum oscillation frequency; minimum noise figure; optimum reflection coefficient; noise conductance; high electron mobility transistor; HEMT; low noise amplifier; LNA.

DOI: 10.1504/IJNP.2022.126356

International Journal of Nanoparticles, 2022 Vol.14 No.2/3/4, pp.181 - 201

Received: 21 Sep 2021
Accepted: 16 Nov 2021
Published online: 24 Oct 2022 *

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