Title: Design and simulation of LDO circuit

Authors: Huijing Yang; Runze Lv; Mingyuan Ren

Addresses: Harbin University of Science and Technology, Harbin 150080, Heilongjiang Province, China ' Harbin University of Science and Technology, Harbin 150080, Heilongjiang Province, China ' Jinhua Advanced Research Institute, Jinhua 321013, Zhejiang Province, China

Abstract: With the rapid development of portable electronic products, the contradiction between the rapid rise in energy consumption of electronic products and the slow development of battery technology limits the application potential of many electronic devices. Low-power consumption power management chips have become a research hotspot. In this paper, a closed-loop stable LDO circuit structure based on curvature compensation reference is designed using 0.18 μm CMOS process. The designed LDO has high power rejection ratio and small static current, which is suitable for use as a power management chip in portable electronic products.

Keywords: integrated circuit; CMOS; LDO.

DOI: 10.1504/IJNM.2023.136567

International Journal of Nanomanufacturing, 2023 Vol.18 No.3/4, pp.130 - 136

Received: 08 Nov 2022
Accepted: 18 Jan 2023
Published online: 07 Feb 2024 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article