Title: Bias-Enhanced Nucleation of NCD on high-adherent diamond/Ti6Al4V films

Authors: A.F. Azevedo, V.J. Trava-Airoldi, N.G. Ferreira

Addresses: Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12245-970, S.J. Campos, Sao Paulo, SP, Brazil. ' Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12245-970, S.J. Campos, Sao Paulo, SP, Brazil. ' Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12245-970, S.J. Campos, Sao Paulo, SP, Brazil

Abstract: Thin films with high nucleation of Nanocrystalline Diamond (NCD) and good adherence were deposited on Ti6Al4V alloy by microwave-assisted technique. Nucleation density of 5.0 × 109 part/cm² was achieved by using a bias voltage of -400 V applied during 5 min. Diamond films were deposited on polished and jetted substrates after bias process and showed a good quality and a total residual stress of -2.8 GPa and -1.4 GPa, respectively. Diamond/Ti6Al4V adherence was investigated as a function of substrate preparation and film growth time using Rockwell indenter with loads up to 2451 N. Films deposited on jetted substrates presented the best adhesion.

Keywords: thin films; titanium alloy; adhesion; nanocrystalline diamond; NCD; bias-enhanced nucleation; BEN; diamond films; jetted substrates; nanomanufacturing; nanotechnology.

DOI: 10.1504/IJNM.2008.017840

International Journal of Nanomanufacturing, 2008 Vol.2 No.1/2, pp.70 - 79

Published online: 19 Apr 2008 *

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