Title: A simple treatment of quantum dissipative transport in carbon nanotube transistors

Authors: Mahmoud Ossaimee, Salah H. Gamal

Addresses: Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt. ' Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Cairo, Egypt

Abstract: In this paper, we extend our simulation model for the ballistic transport in carbon nanotube field effect transistors (CNTFETs) to include carrier scattering and dissipative transport. A simplified quantum dissipative model is proposed based on the concept of Buttiker probes within the non-equilibrium Green|s function (NEGF) formalism. We display a few of the simulation results and compare them with the ballistic transport case and with the results from more rigorous quantum models based on acoustic and optical phonon scattering models.

Keywords: carbon nanotubes; nanotransistors; MOS CNFET; NEGF formalism; quantum transport; Buttiker probes; field effect transistors; nanotechnology; carrier scattering; dissipative transport; simulation.

DOI: 10.1504/IJNM.2009.028136

International Journal of Nanomanufacturing, 2009 Vol.4 No.1/2/3/4, pp.283 - 289

Published online: 07 Sep 2009 *

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