Title: Estimating mobility and lifetime of charge carriers in semiconductor detectors using Genetic Algorithms

Authors: Noha Shaaban

Addresses: Department of Nuclear Safeguards and Physical Protection, NCNSRC, The Egyptian Atomic Energy Authority, P.O. Box 7551, Nasr City 11762, Cairo, Egypt

Abstract: A Genetic Algorithm (GA) was adopted to extract realistic values of the transport properties of both electrons and holes in semiconductor materials. A theoretical waveform model was fitted to the real digitised signal waveform taking into account the realistic transport parameters. This method is simple and useful for pulse shape analysis; the result demonstrates promise for the successful application of GAs for the estimation of detector parameters in semiconductor detectors.

Keywords: compound semiconductor detectors; GAs; genetic algorithms; mobility; charge carrier lifetime; signal waveform; digital signal processing; DSP; Hecht equation; charge carriers; electrons; holes; semiconductor materials.

DOI: 10.1504/IJSISE.2009.033727

International Journal of Signal and Imaging Systems Engineering, 2009 Vol.2 No.3, pp.148 - 152

Received: 20 Sep 2008
Accepted: 06 Apr 2009
Published online: 29 Jun 2010 *

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