Title: The reactive gas pulsing process for tuneable properties of sputter deposited titanium oxide, nitride and oxynitride coatings

Authors: Nicolas Martin, Aurelien Besnard, Fabrice Sthal, Jamal Takadoum

Addresses: Institute FEMTO-ST, 6174 CNRS, Universite de Franche-Comte, ENSMM, UTBM26, Chemin de l'epitaphe, F-25030 Besancon Cedex, France. ' Institute FEMTO-ST, 6174 CNRS, Universite de Franche-Comte, ENSMM, UTBM26, Chemin de l'epitaphe, F-25030 Besancon Cedex, France. ' Institute FEMTO-ST, 6174 CNRS, Universite de Franche-Comte, ENSMM, UTBM26, Chemin de l'epitaphe, F-25030 Besancon Cedex, France. ' Institute FEMTO-ST, 6174 CNRS, Universite de Franche-Comte, ENSMM, UTBM26, Chemin de l'epitaphe, F-25030 Besancon Cedex, France

Abstract: TiO_x, TiN_y and TiO_xN_y thin films were deposited by reactive sputtering. The reactive gas pulsing process was implemented to tune the chemical composition and consequently, the characteristics of the films. For TiO_x coatings, oxygen concentration was progressively modified from pure titanium to TiO₂ compound. Similarly, a gradual decrease of the deposition rate and a controlled modulation of the chemical composition of TiN_y films (y between 0 and 1.05) were easily reached. A reverse evolution of the oxygen and nitrogen contents was produced in TiO_xN_y films, which was correlated with the smooth transition from metallic to semiconducting behaviours.

Keywords: gas pulsing; reactive sputtering; titanium oxide; titanium nitride; titanium oxynitride.

DOI: 10.1504/IJMPT.2010.034268

International Journal of Materials and Product Technology, 2010 Vol.39 No.1/2, pp.159 - 177

Published online: 31 Jul 2010 *

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