Title: Cross-section high resolution transmission electron microscopy and nanoprobe investigations of gallium nitride nanowires

Authors: Benjamin W. Jacobs, Kaylee McElroy, Raed A. Al-Duhaileb, Martin A. Crimp, Virginia M. Ayres, Richard E. Stallcup, Adam B. Hartman, Mary Anne Tupta

Addresses: Michigan State University, East Lansing, Michigan, 48824, USA; Sandia National Laboratories, Livermore, CA 94551-0969, USA. ' Michigan State University, East Lansing, Michigan, 48824, USA. ' Michigan State University, East Lansing, Michigan, 48824, USA. ' Michigan State University, East Lansing, Michigan, 48824, USA. ' Michigan State University, East Lansing, Michigan, 48824, USA. ' Zyvex Instruments, Richardson, TX, 75081, USA. ' Zyvex Instruments, Richardson, TX, 75081, USA; Siemens Energy & Automation, Arlington, TX, USA. ' Keithley Instruments, Inc., Cleveland, OH, 44139, USA

Abstract: Gallium nitride nanowires and rods were grown by a vapour-solid growth mechanism over an 850-1,000°C furnace growth temperature range. Investigations by parallel (cross-section) high resolution transmission electron microscopy revealed correlated internal structures. The effects of the internal structures on electronic properties were investigated by micro- and nano-probe experiments. A space-charge limited interpretation of the observed non-linear I-V behaviour is examined.

Keywords: gallium nitride nanowires; multiphase nanowires; internal structure; transmission electron microscopy; high resolution TEM; HRTEM; focussed ion beam; FIB; cross-section; nanoelectronics; nanoprobes; microprobes; nanotechnology.

DOI: 10.1504/IJNM.2010.034789

International Journal of Nanomanufacturing, 2010 Vol.6 No.1/2/3/4, pp.264 - 278

Published online: 22 Aug 2010 *

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