Title: Low pressure CVD boro-hydro-nitride films and the application for X-ray mask

Authors: Wang Yuling, Chen Mengzhen, Jiang Hong

Addresses: Microelectronics R&D Centre, Chinese Academy of Sciences, PO Box 650, Beijing, 100010, People's Republic of China. ' Microelectronics R&D Centre, Chinese Academy of Sciences, PO Box 650, Beijing, 100010, People's Republic of China. ' Microelectronics R&D Centre, Chinese Academy of Sciences, PO Box 650, Beijing, 100010, People's Republic of China

Abstract: Films containing boron, nitrogen and hydrogen have been deposited at 388-700°C by reacting diborane and amronia at reduced pressure. The deposition rate is 100-200 A /min at 400°C. The refractive index is 1.9-2.0 at 400°C. All films deposited at several temperature have strong B-N absorption from 1310 to 1400 cm⁻¹. The films are composed of B_1-3NH and are noncrystly. The measured resistivity is about 5*10E7Ωcm. The wafer bow method is used to measure the stress of the films. The stress of the films can be controlled in the range of (1-5)*10E8 dynes/cm² by the vacuum annealing after the deposition at 400° C. The optical transmission of the film was measured in the range of wavelength fron 200 to 800 nm. It is about 70% at 600 nm. The film is chemical inertness but it can be etched quickly by (C₇F₁₄ + 0₂) plasma. We have fabricated BN X-ray mask with vertical wall submicron gold absorber patterns which are obtained by RIE and DC electroplating technique. It will be used for synchrotron X-ray exposures at BEPC in China.

Keywords: LPCVD; nitrogen; hydrogen; lithography; boron nitride films; transperant layers; X-ray masks; stress measurement; optical transmission; plasma etching; low pressure CVD; chemical vapour deposition.

DOI: 10.1504/IJMPT.1993.036545

International Journal of Materials and Product Technology, 1993 Vol.8 No.2/3/4, pp.340 - 348

Published online: 04 Nov 2010 *

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