Title: Annealing effect on photoluminescence properties of SiO₂/SiN_x coating

Authors: S. Meziani; A. Moussi; L. Mahiou; R. Outemzabet

Addresses: Unité de Développement de la Technologie du Silicium (UDTS), 02, Bd. Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Alger, Algeria ' Unité de Développement de la Technologie du Silicium (UDTS), 02, Bd. Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Alger, Algeria ' Unité de Développement de la Technologie du Silicium (UDTS), 02, Bd. Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Alger, Algeria ' Laboratoire des semi-conducteurs, Faculté physique, Université des sciences et de la technologie Houari Boumediene, BP 32 El Alia, Bab Ezzouar, Alger, Algeria

Abstract: Hydrogenated amorphous silicon nitride (SiN_x:H) films were deposited using plasma-enhanced chemical vapour deposition (PECVD) and subsequently, silicon oxide (SiO₂) were grown by dry thermal oxidation at 950°C for 60 min or by dip-coating (sol gel 's-g') operations. Thermal annealing processes were performed at 500 to 1,000°C during 30 min in an N₂ atmosphere to study the effect of annealing temperature on light-emitting and charge storage properties. It is found that the photoluminescence spectra are also changed after annealing treatments and the possible originations are discussed.

Keywords: SiO2; silicon oxide; hydrogenated amorphous silicon nitride; SiNx; plasma-enhanced CVD; chemical vapour deposition; PECVD; annealing temperature; photoluminescence; sol gel; dip coating; thermal oxidation.

DOI: 10.1504/IJNP.2013.054986

International Journal of Nanoparticles, 2013 Vol.6 No.2/3, pp.113 - 121

Published online: 31 Mar 2014 *

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