Title: The design of a novel delay cell based 8.3 GHz, low phase noise ring oscillator in C-MOS 180 nm technology for biomedical ultra-wide-band integrated applications

Authors: Ashish Raman; Rakesh Kumar Sarin

Addresses: Department of Electronics and Communication Engineering, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar 144 011, Punjab, India ' Department of Electronics and Communication Engineering, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar 144 011, Punjab, India

Abstract: This paper presents the designing of a novel wide frequency range, low phase noise, 3-delay stages based ring oscillator for Ultra-Wide-Band (UWB) biomedical application. The phase noise is reduced by using both PMOS and NMOS latch together. The high frequency is achieved, reducing the switching time of the delay cell, varying the resistance through control voltage (V_CONTROL), controlling the strength of the NMOS latch through tuning voltage (V_TUNE) and by connecting the gates of the secondary input transistor with same input of the delay cell. This oscillator is implemented using 180 nm CMOS process provided by TSMC. The designed oscillator is measured to cover a frequency range of 5.9-8.3 GHz@1.8-V power supply and manifests a phase noise of −167dBc/Hz @1MHz and −175 dBc/Hz @10 MHz offset from a centre frequency of 5.9 GHz and occupies an area of 194 μm × 147 μm with the power dissipation of 14.684 dbm.

Keywords: CMOS; low power; phase noise; VCO; voltage controlled oscillator; ring oscillator; multi-feed forward; VLSI; fine tuning; ultra wideband; UWB biomedical applications; oscillator noise; oscillator stability; PLL; slew time; switching time; delay cells.

DOI: 10.1504/IJBET.2013.057709

International Journal of Biomedical Engineering and Technology, 2013 Vol.13 No.1, pp.1 - 16

Received: 15 Apr 2013
Accepted: 04 Aug 2013
Published online: 27 Sep 2014 *

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