Title: Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)

Authors: Kheira Ameur; Halima Mazari; Zineb Benamara; Nadia Benseddik; Reski Khelifi; Mohammed Mostefaoui; Nawal Benyahya; Bernard Gruzza

Addresses: Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Applied Micro Electronic Laboratory, University Djillali Liabes of Sidi Bel Abbes, 22000 Sidi Bel Abbes, Algeria ' Laboratory of Material Sciences for Electronic and Automatic, University of Blaise Pascal, Les Cézeaux, Clermont II, France

Abstract: In this paper, electrical characterisation and analytical modelling of current-voltage (I-V) and capacitance-voltage (C-V) for Hg/InN/n-InP Schottky structures are investigated. We have studied electrically thin InN films realised by the nitridation of InP(100) substrates using a glow discharge source (GDS) in ultra high vacuum. So, we have calculated, using I-V and C-V measurements, the ideality factor n, the saturation current I_s, the barrier height φ_bn, the series resistance R_s, the doping concentration N_d and the diffusion voltage V_d. We have also established analytical calculation programmes of I-V and C-V curves in order to show the effect of the interface layer InN and series resistance R_s on the calculated parameters.

Keywords: InN; InP(100); electrical measurements; analytical modelling; Schottky barrier diodes; nitridation; semiconductors; nitrides; indium nitride; indium phosphide; ideality factor; saturation current; barrier height; series resistance; doping concentration; diffusion voltage; interface layer.

DOI: 10.1504/IJMATEI.2014.066853

International Journal of Materials Engineering Innovation, 2014 Vol.5 No.4, pp.294 - 306

Received: 18 Sep 2013
Accepted: 06 Dec 2013
Published online: 26 Feb 2015 *

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