Title: Performance evaluation of multi-junction solar cell with a new InGaP tunnel junction

Authors: P.P. Nayak; J.P. Dutta; G.P. Mishra

Addresses: Department of Electronics and Instrumentation Engineering, ITER, Siksha 'O' Anusandhan University, Bhubaneswar 751030, Odisha, India ' Department of Electronics and Instrumentation Engineering, ITER, Siksha 'O' Anusandhan University, Bhubaneswar 751030, Odisha, India ' Department of Electronics and Instrumentation Engineering, ITER, Siksha 'O' Anusandhan University, Bhubaneswar 751030, Odisha, India

Abstract: In this paper the performance of InGaP/GaAs dual junction solar cell with InGaP/InGaP tunnel junction has been investigated using various single layer and double layer anti-reflection coatings like Al₂O₃, TiO₂, ITO, Si₃N₄, ITO + Al₂O₃ and TiO₂ + Al₂O₃. In order to determine the best anti-reflection coating, reflectivity and absorptivity graphs of each ARC is simulated and compared. The simulation of the multi-junction solar cell has been carried through computational numerical modelling TCAD tool ATLAS. The electric field developed across each layer along with photogeneration rates is determined and the simulation results are validated with published experimental data. The multi-junction solar cell model is implemented with optimised InGaP/GaAs dual junction cell having Al₂O₃ and TiO₂ as double layer anti-reflection coating with effective InGaP/InGaP tunnel junction. A maximum conversion efficiency of 39.9724% is obtained under AM1.5G illumination.

Keywords: anti-reflection coating; ATLAS; dual junction solar cells; tunnel junctions; reflectivity; photogeneration rate; performance evaluation; multi-junction solar cells; InGaP; indium gallium phosphide; conversion efficiency; absorptivity; BSF; biomaterials; simulation; numerical modelling.

DOI: 10.1504/IJNBM.2014.069820

International Journal of Nano and Biomaterials, 2014 Vol.5 No.4, pp.263 - 279

Received: 25 Jul 2014
Accepted: 23 Feb 2015
Published online: 12 Jun 2015 *

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