Title: Optical and electrical properties of Nd-doped ZnO films prepared by sol-gel method

Authors: H-Y. He; Z. He; Q. Shen

Addresses: College of Materials Science and Engineering, Shaanxi University of Science and Technology, 710021, China ' College of Materials Science and Engineering, Shaanxi University of Science and Technology, 710021, China ' College of Materials Science and Engineering, Shaanxi University of Science and Technology, 710021, China

Abstract: ZnO films doped with Nd contents of 0%-0.81% were deposited by a chemical solution deposition and characterised by X-ray diffraction, field emission scanning electron microscopy, UV-vis and luminescent spectrophotometry and electrical measurement. The experiments revealed that the films have nano-scale particle size that increased with increasing Nd content. The Nd doping resulted in the obvious variations of transmittance in the UV-visible light range, the band gap and resistivity. Thin film showed an optimal optical and electrical properties at Nd content of 0.42%. The films also showed a strong band gap emission and a very weak emission related to intrinsic defect.

Keywords: ZnO; Nd-doping; sol-gel deposition; transmittance; band gap; luminescence; electrical resistivity.

DOI: 10.1504/IJNM.2017.087531

International Journal of Nanomanufacturing, 2017 Vol.13 No.4, pp.295 - 306

Received: 15 Jan 2016
Accepted: 25 Apr 2016
Published online: 18 Oct 2017 *

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