Title: Study on a non-contact polishing method using motion coupling confined etchant layer technique

Authors: Yongzhi Cao; Yuchao Jia; Yongda Yan; Lianhuan Han; Xuesen Zhao; Zhenjiang Hu; Dongping Zhan

Addresses: Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China ' Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China ' Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China ' Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China; College of Chemistry and Chemical Engineering, and State Key Laboratory for Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, China ' Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China ' Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China ' College of Chemistry and Chemical Engineering, and State Key Laboratory for Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, China

Abstract: The confined etchant layer technique (CELT) has been proved not only an effective electrochemical microstructures fabrication method, but also a potential polishing method due to its distance sensitiveness. To verify its polishing capability in motion mode and examine the influence of motion parameters on polishing efficiency and material removal rate, motion coupling confined etchant layer technique (MCCELT) polishing experiments were carried out on n-GaAs wafers by adopting central composite inscribe (CCI) design of response surface methodology. Furthermore, the interactions between motion, electrochemical reaction and substrate deformation were analysed using multi-physics coupling finite element simulations. Statistical model shows that sample surface roughness decreases with the decreases of working distance (between the electrode and the substrate) and feeding velocity, and indicates it still has potential to reach more smooth results.

Keywords: polishing; multi-physics coupling; electrochemical; GaAs; response surface methodology; RSM.

DOI: 10.1504/IJNM.2018.089179

International Journal of Nanomanufacturing, 2018 Vol.14 No.1, pp.51 - 64

Received: 11 Aug 2016
Accepted: 07 Nov 2016
Published online: 09 Jan 2018 *

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