Title: An insight into the high frequency analysis of work function modulated cylindrical surrounding gate MOSFET

Authors: Biswajit Jena; Sidhartha Dash; Guru Prasad Mishra

Addresses: Device Simulation Lab, Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan University, Bhubaneswar, 751030, India ' Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan University, Bhubaneswar, 751030, India ' Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan University, Bhubaneswar, 751030, India

Abstract: The unique design along with greater accuracy in device performance has made cylindrical surrounding gate MOSFET (CSGM) a cutting edge device in the present VLSI technology. Due to its cylindrical geometry, this device provides higher packing density and higher scaling possibilities. In this work, a work function engineering based metal gate with continuous mole fraction variation along the z-axis in a cylindrical surrounding gate MOSFET (WMCSGM) is introduced. The proposed WMCSGM model exhibits improved RF performance as compared to conventional CSGM model. The static g_m-VGS curve and C_gg-VGS curves are investigated clearly. The relevant electrical parameters such as threshold voltage (V_th), drain current (I_d) and transconductance are extracted. Along with the electrical parameters, RF parameters and gain parameters (current gain and voltage gain) and different performance measures (cut-off frequency, maximum oscillation frequency) have been extensively investigated.

Keywords: cut-off frequency; maximum oscillation frequency; CSGM; WMCSGM; work function modulation.

DOI: 10.1504/IJNP.2018.092671

International Journal of Nanoparticles, 2018 Vol.10 No.1/2, pp.15 - 26

Received: 30 May 2017
Accepted: 05 Aug 2017
Published online: 27 Jun 2018 *

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