Title: Reliability studies on biaxially tensile strained-Si channel p-MOSFETs

Authors: S. Das; T.P. Dash; S. Dey; R.K. Nanda; C.K. Maiti

Addresses: Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar, Odisha 751030, India ' Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar, Odisha 751030, India ' Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar, Odisha 751030, India ' Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar, Odisha 751030, India ' Department of Electronics and Communication Engineering, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar, Odisha 751030, India

Abstract: An integrated technology computer aided simulation framework is used for the first time to predict the reliability (degradation) of substrate-induced strained-Si channel heterojunction field effect transistors on relaxed Silicon-Germanium buffer layer with ultra-thin SiO₂ and high-k gate stacks. State-of-the-art four-state nonradiative multiphonon model is used for the degradation studies. Single defects and trap studies have been taken up on devices subjected to negative voltage stressing at an elevated temperature. Threshold voltage shift (due to charge capture and emission processes) in virtually fabricated devices has been studied in detail. For the first time, non radiative multiphonon model is used to explain the degradation mechanisms (oxide defects dominating the partial recovery of threshold voltage after stressing) in strained-Si channel heterojunction field effect transistors. It is shown that degradation in strained-Si channel device on relaxed-SiGe buffer is more compared to its Si-channel counterpart.

Keywords: reliability; degradation; non-radiative multiphonon model; biaxial strain; strained-Si; relaxed-SiGe; oxide defects.

DOI: 10.1504/IJMMP.2019.098113

International Journal of Microstructure and Materials Properties, 2019 Vol.14 No.1, pp.28 - 46

Received: 16 Feb 2018
Accepted: 04 Sep 2018
Published online: 04 Mar 2019 *

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