Article Comments

Contributions from readers on our articles are very welcome. This form will let us retrieve the current data in the database and allows us to consider your comments.

Design and development of a novel MOSFET structure for reduction of reverse bias pn junction leakage current
Debasis Mukherjee; B.V. Ramana Reddy
International Journal of Intelligence and Sustainable Computing (IJISC), 2020 Vol.1 No.1, pp.32 - 43
20 + 7 =

Thank you for your feedback.

Return to top