Article Comments

Contributions from readers on our articles are very welcome. This form will let us retrieve the current data in the database and allows us to consider your comments.

Vertically-stacked silicon nanosheet field effect transistors at 3 nm technology nodes - simulation at nanoscale
E. Mohapatra; T.P. Dash; S. Dey; J. Jena; S. Das; C.K. Maiti
International Journal of Nanoparticles (IJNP), 2020 Vol.12 No.3, pp.224 - 237
2 + 11 =

Thank you for your feedback.

Return to top