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Vertically-stacked silicon nanosheet field effect transistors at 3 nm technology nodes - simulation at nanoscale
E. Mohapatra; T.P. Dash; S. Dey; J. Jena; S. Das; C.K. Maiti
International Journal of Nanoparticles (IJNP), 2020 Vol.12 No.3, pp.224 - 237
20 - 18 =

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