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Optimisation of extrinsic base doping of a SiGe heterojunction bipolar transistor integrated in a BiCMOS 55 nm technology for high frequency performances
C.G. Lachkhab; M. Lakhdara; A. Boulgheb; S. Latreche
International Journal of Nanotechnology (IJNT), 2023 Vol.20 No.11/12, pp.1017 - 1026
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