Article Comments

Contributions from readers on our articles are very welcome. This form will let us retrieve the current data in the database and allows us to consider your comments.

Numerical simulation of SiC crystal growth during physical vapour transport using the lattice Boltzmann - phase field model
Hu Zhao; Shilin Mao; Hui Xing; Dongke Sun
International Journal of Computational Materials Science and Surface Engineering (IJCMSSE), 2023 Vol.11 No.3/4, pp.253 - 271
6 - 6 =

Thank you for your feedback.

Return to top