Article Comments

Contributions from readers on our articles are very welcome. This form will let us retrieve the current data in the database and allows us to consider your comments.

Analysis of conduction mechanism in silicon nitride-based RRAM
Sunghun Jung; Sungjun Kim; Jeong-Hoon Oh; Kyung-Chang Ryoo; Jong-Ho Lee; Hyungcheol Shin; Byung-Gook Park
International Journal of Nanotechnology (IJNT), 2014 Vol.11 No.1/2/3/4, pp.167 - 177
12 + 6 =

Thank you for your feedback.

Return to top