High power laser diode with non-absorbing windows fabricated by quantum well intermixing
by T. Lin; H.Q. Zhang; C. Li; X.J. Ma; N. Lin; K. Zheng; X.Y. Ma
International Journal of Nanomanufacturing (IJNM), Vol. 9, No. 3/4, 2013

Abstract: Characterisation techniques based on quantum well intermixing have recently emerged as novel and exploratory methods for developing high power laser diodes. In this paper, we demonstrate the application of Zn impurities induced quantum well intermixing techniques to the non-absorbing windows fabrication for the AlGaInP/GaInP active region red-light laser diodes. The experimental results demonstrate that the photoluminescence characterisation had a blue shift of 23 nm for the diffusion parameters of 540°C and 20 minutes, and the maximum output power from the light-current tests of the thereafter fabricated non-absorbing windows laser diodes were improved by 47% than the conventional LDs.

Online publication date: Mon, 31-Mar-2014

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