Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia Online publication date: Thu, 30-Mar-2017
by D.V. Guseinov; D.I. Tetelbaum; A.N. Mikhaylov; A.I. Belov; M.E. Shenina; D.S. Korolev; I.N. Antonov; A.P. Kasatkin; O.N. Gorshkov; E.V. Okulich; V.I. Okulich; A.I. Bobrov; N.V. Malekhonova; D.A. Pavlov; E.G. Gryaznov
International Journal of Nanotechnology (IJNT), Vol. 14, No. 7/8, 2017
Abstract: A filamentary model of bipolar resistive switching has been developed for the Au/ZrO2(Y)/TiN/Ti memristive nanostructures by using kinetic Monte-Carlo approach for the migration of oxygen vacancies at the stages of electroforming, SET, and RESET processes observed experimentally in the current-voltage switching hysteresis. Statistics of the forming and switching voltages are collected and used to simulate current-voltage characteristics based on a simplified multi-filament model. It is demonstrated that both abrupt and gradual switching behaviours can be determined by the parameters of the statistical distribution of switching voltages of different conductive channels - filaments. The results can be used for the development of new-generation nonvolatile memory.
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email subs@inderscience.com
Our Blog 
Follow us on Twitter 
Visit us on Facebook