Electrical parameter analysis of gate-extension on source of germanium tri-gate FinFET
by Rajashree Das; Srimanta Baishya
International Journal of Nanoparticles (IJNP), Vol. 11, No. 2, 2019

Abstract: This paper presents the impact of geometrical and the electrical parameters such as the concentration in channel region, variation of temperature, drain potential, gate work function, and electrostatic potential on the electrical characteristics of germanium (Ge) FinFET with two stacked gate dielectrics overlap on the source. The presented device exhibits better performance in terms of I_ON, I_OFF, and I_ON/I_OFF compared to the conventional FinFET structure.

Online publication date: Fri, 19-Apr-2019

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